advanced power n-channel enhancement mode electronics corp. power mosfet low gate charge bv dss 60v single drive requirement r ds(on) 80m surface mount package i d 14a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w w/ t stg t j symbol value units rthj-c thermal resistance junction-case max. 4.5 /w rthj-a thermal resistance junction-ambient max. 62 /w data and specifications subject to change without notice 200314072-1/4 AP9973GS/p rohs-compliant product parameter rating drain-source voltage 60 gate-source voltage continuous drain current, v gs @ 10v 14 continuous drain current, v gs @ 10v 9 pulsed drain current 1 40 total power dissipation 27 -55 to 150 operating junction temperature range -55 to 150 linear derating factor 0.22 thermal data parameter storage temperature range 20 g d s 20 the advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the to-263 package is universally preferred for all commercial- industrial surface mount applications and suited for low voltage applications such as dc/dc converters. the through-hole version (ap9973gp) are available for low-profile applications. g d s to-263(s) g d s to-220(p)
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 60 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.05 - v/ r ds(on) static drain-source on-resistance 2 v gs =10v, i d =9a - - 80 m v gs =4.5v, i d =6a - - 100 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =9a - 8.6 - s i dss drain-source leakage current (t j =25 o c) v ds =60v, v gs =0v - - 10 ua drain-source leakage current (t j =150 o c) v ds =48v ,v gs =0v - - 25 ua i gss gate-source leakage v gs =20v - - 100 na q g total gate charge 2 i d =9a - 8 13 nc q gs gate-source charge v ds =48v - 3 - nc q gd gate-drain ("miller") charge v gs =4.5v - 4 - nc t d(on) turn-on delay time 2 v ds =30v - 7 - ns t r rise time i d =9a - 15 - ns t d(off) turn-off delay time r g =3.3 , v gs =10v - 16 - ns t f fall time r d =3.3 -3- ns c iss input capacitance v gs =0v - 720 1150 pf c oss output capacitance v ds =25v - 77 - pf c rss reverse transfer capacitance f=1.0mhz - 45 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =14a, v gs =0v - - 1.2 v t rr reverse recovery time i s =9a, v gs =0 v , - 28 - ns q rr reverse recovery charge di/dt=100a/s - 27 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 2/4 AP9973GS/p this product is electrostatic sensitive, please handle with caution. this product has been qualified for use in consumer applications. applications or use in life support or other similar mission-critical devices or systems are not authorized.
fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature 2.01e+08 fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3/4 AP9973GS/p 0 5 10 15 20 25 30 35 40 45 0123456 v ds , drain-to-source voltage (v) i d , drain current (a) v g =3.0v t c =25 o c 10v 7.0v 5.0v 4.5v 65 70 75 80 85 90 357911 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =9a t c =25 o c 0 4 8 12 16 20 24 28 32 01234567 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c v g =3.0v 10v 7.0v 5.0v 4.5v 0.0 0.5 1.0 1.5 2.0 2.5 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) v g =10v i d =9a 0 0.5 1 1.5 2 2.5 -50 0 50 100 150 t j ,junction temperature ( o c) v gs(th) (v) 0 2 4 6 8 10 12 14 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4/4 AP9973GS/p t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 4.5v q gs q gd q g charge 10 100 1000 10000 1 5 9 1317212529 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0 2 4 6 8 10 12 0 4 8 12 16 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =48v v ds =38v v ds =30v i d =9a 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.1 1 10 100 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c single pulse 1ms 10ms 100ms 1s dc
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